Background selection of voltage reference values for performing memory read operations
US8638602B1 · kind B1 · utility
207Cited by
7References
18Claims
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Key dates
| Filing date | Jun 23, 2011 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Nov 4, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/4402
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage subsystem implements a background process for selecting voltage reference values to use for reading data from a non-volatile memory array, such as an array of multi-level cell (MLC) flash memory. The process involves performing background read operations using specific sets of voltage reference values while monitoring the resulting bit error counts. The selected voltage reference values for specific pages or other blocks of the array are stored in a table. Read operations requested by a host system are executed using the corresponding voltage reference values specified by the table.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.