Method for fabricating monolithic two-dimensional nanostructures
US8641912B2 · kind B2 · utility
12Cited by
3References
21Claims
0Family size
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Key dates
| Filing date | May 21, 2008 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Dec 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A patterning method for the creation of two-dimensional nanowire structures. Nanowire patterning methods are used with lithographical patterning approaches to form patterns in a layer of epoxy and resist material. These patterns are then transferred to an underlying thin film to produce a two-dimensional structure with desired characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.