Photovoltaic device and manufacturing method thereof
US8642115B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 19, 2010 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Jan 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer; and wherein the light absorbing layer included in at least the one photoelectric transformation layer includes a first sub-layer and a second sub-layer, each of which includes hydrogenated amorphous silicon based material and a crystalline silicon grain respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.