Thin film transistor structure, method of manufacturing the same, and electronic device
US8642364B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2013 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Apr 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0312
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.