Patent · US Active

Vertically structured LED by integrating nitride semiconductors with Zn(Mg,Cd,Be)O(S,Se) and method for making same

US8642369B2 · kind B2 · utility

0Cited by

8References

7Claims

0Family size

Assignee

ZN TECHNOLOGY, INC. · US

Inventors

Jizhi Zhang · Ithaca, US
Jin Song · Brea, US

Key dates

Filing date	Mar 3, 2009
Grant date	Feb 4, 2014
Priority date	—
Expiry date	Oct 14, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/825
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula Zn1−a−b−cMgaCdbBecO1−p−qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1, and q=0˜1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.