Formation of strain-inducing films using hydrogenated amorphous silicon

US8642413B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Anand S. Murthy · Beaverton, US
• Jeffrey Armstrong · Fredonia, US
• Dennis G. Hanken · Beaverton, US

Key dates

• Filing date: Sep 14, 2006
• Grant date: Feb 4, 2014
• Expiry date: Aug 1, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A method to form a strain-inducing epitaxial film is described. In one embodiment, the strain-inducing epitaxial film is a three-component epitaxial film comprising atoms from a parent film, charge-neutral lattice-substitution atoms and charge-carrier dopant impurity atoms. In another embodiment, the strain-inducing epitaxial film is formed by a multiple deposition/etch cycle sequence involving hydrogenated amorphous silicon, followed by charge carrier dopant and charge-neutral lattice-forming impurity atom implant steps and, finally, a kinetically-driven crystallization process.