Non-volatile memory device
US8642988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2012 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Aug 17, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/78
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device includes: a first line extending along a main surface of a substrate; a stack provided above the first line; a second line formed above the stack; a select element provided where the first and second lines intersect, the select element adapted to pass current in a direction perpendicular to the main surface; a second insulator film provided along a side surface of the stack; a channel layer provided along the second insulator film; an adhesion layer provided along the channel layer; and a variable resistance material layer provided along the adhesion layer, wherein the first and second lines are electrically connected via the select element and channel layer, a contact resistance via the adhesion layer between the channel layer and variable resistance material layer is low, and a resistance of the adhesion layer is high with respect to an extending direction of the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.