Patent · US Active

Resistive random access memory cell and memory

US8642989B2 · kind B2 · utility

3Cited by

0References

15Claims

0Family size

Assignee

Institute of Microelectronics, Chinese Academy of Sciences China · CN

Inventors

Qi Liu · New Taipei, TW
Ming Liu · Beijing, CN
Shibing Long · Beijing, CN
Hangbing Lv · Beijing, CN

Key dates

Filing date	Oct 13, 2011
Grant date	Feb 4, 2014
Priority date	—
Expiry date	Oct 13, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/77
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A Resistive Random Access Memory (RRAM) cell and a memory are disclosed. In one embodiment, the RRAM cell comprises a two-state resistor and a resistive switching memory cell connected in series. The two-state resistor can supply relatively large currents under both positive and negative voltage polarities. As a result, it is possible to reduce leakage paths in a crossbar array of memory cells, and thus to suppress reading crosstalk.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.