Photosensitive quantum dot, composition comprising the same and method of forming quantum dot-containing pattern using the composition
US8642991B2 · kind B2 · utility
11Cited by
4References
18Claims
0Family size
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Key dates
| Filing date | Jun 8, 2009 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Jan 2, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photosensitive quantum dot including a quantum dot, and a plurality of photosensitive moieties that are bound to a surface of the quantum dot, wherein each of the photosensitive moieties includes silicon (Si) and a photosensitive functional group. Also disclosed are a composition for forming a quantum dot-containing pattern, where the composition includes the photosensitive quantum dot, and a method of forming a quantum dot-containing pattern using the composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.