Semiconductor light emitting device
US8643044B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2011 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Dec 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.