Semiconductor device and method of manufacturing a semiconductor device
US8643121B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2009 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Nov 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of manufacturing a gate stack for such a semiconductor device. The device includes a gate stack that has a gate insulation layer provided over a channel region of the device, and a metal layer that is insulated from the channel region by the gate insulation layer. The metal layer contains work function modulating impurities which have a concentration profile that varies along a length of the metal layer from the source region to the drain region. The gate stack has a first effective work function in the vicinity of a source region and/or the drain region of the device and a second, different effective work function toward a center of the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.