High breakdown voltage integrated circuit isolation structure
US8643138B2 · kind B2 · utility
15Cited by
0References
10Claims
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Assignee
Inventor
Key dates
| Filing date | Jun 30, 2011 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Jan 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high breakdown voltage integrated circuit isolator device communicates a digital signal from a signal input on one semiconductor die to a signal output on another semiconductor die while providing high voltage isolation between the signal input and the signal output. Each die may include a respective capacitive isolation barrier structure that couple together via a bonding wire between combined top metal/bonding pads of the capacitive isolation barrier structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.