High temperature half bridge gate driver
US8643407B2 · kind B2 · utility
5Cited by
7References
9Claims
0Family size
Inventors
Key dates
| Filing date | Jun 22, 2012 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Jun 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/162
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A half bridge gate driving circuit for providing gate driving circuits in a bi-hecto celcius (200 degrees celcius) operating environment having multiple functions including combinations of multiple level logic inputs, noise immunity, fault protection, overlap protection, pulse modulation, high-frequency modulation with transformer based isolation, high-frequency demodulation back to pulse width modulation, deadtime generator, level shifter for high side transistor, overcurrent protection, and undervoltage lockout.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.