Patent · US Active

Inspection method for inspecting defects of wafer surface

US8643836B1 · kind B1 · utility

0Cited by
3References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 30, 2012
Grant dateFeb 4, 2014
Priority date
Expiry dateAug 30, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N21/9501
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The present invention provides an inspection method for inspecting defects of wafer surface. The method includes: encircling peripheral region of the wafer surface by a first light source set and a second light source set; using a control module to control the first light source set and the second light source set to irradiate the light alternately from different directions; using an image pick-up module to receive a scattered light image during each time when the first light source set or the second light source set irradiates the light on the wafer surface; and then using a process module to obtain an enhanced and clear defect image of wafer surface by processing each of the scattered light images.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.