Nanostructured dielectric materials for high energy density multilayer ceramic capacitors
US8644000B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Sep 13, 2011 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Apr 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/0085
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A multilayer ceramic capacitor, having a plurality of electrode layers and a plurality of substantially titanium dioxide dielectric layers, wherein each respective titanium dioxide dielectric layer is substantially free of porosity, wherein each respective substantially titanium dioxide dielectric layer is positioned between two respective electrode layers, wherein each respective substantially titanium dioxide dielectric layer has an average grain size of between about 200 and about 400 nanometers, wherein each respective substantially titanium dioxide dielectric layer has maximum particle size of less than about 500 nanometers. Typically, each respective substantially titanium dioxide dielectric layer further includes at least one dopant selected from the group including P, V, Nb, Ta, Mo, W, and combinations thereof, and the included dopant is typically present in amounts of less than about 0.01 atomic percent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.