Providing voltage isolation on a single semiconductor die
US8644365B2 · kind B2 · utility
1Cited by
7References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Mar 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1204
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method includes receiving an input signal in transmitter circuitry of a first semiconductor die and processing the input signal, sending the processed input signal to an isolation circuit of the die to generate a voltage isolated signal, and outputting the voltage isolated signal from the isolation circuit to a second semiconductor die coupled to the first semiconductor die via a bonding mechanism. Note that this second semiconductor die may not include isolation circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.