Etching composition

US8647523B2 · kind B2 · utility

Assignees

• Fujifilm Electronic Materials U.S.A., Inc. · US
• FUJIFILM Corporation · JP

Inventors

• Tomonori Takahashi · Chita, JP
• Tadashi Inaba · Odawara, JP
• Atsushi Mizutani · Shizuoka, JP
• Bing Du · Gilbert, US
• William A. Wojtczak · Santa Clara, US
• Kazutaka Takahashi · Shizuoka, JP
• Tetsuya KAMIMURA · Shizuoka, JP

Key dates

• Filing date: Mar 8, 2012
• Grant date: Feb 11, 2014
• Expiry date: Mar 8, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76843
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.