Photosensitive resin composition, photosensitive dry film and method for forming pattern
US8647806B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 27, 2010 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | Dec 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/0393
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is related to a photosensitive resin composition containing: a vinyl-based copolymer (I) obtained by polymerizing a monomer mixture containing a monomer (a) having a phenolic hydroxyl group and a carboxyl group-containing vinyl monomer (b); a quinonediazide compound (II) and a compound (III) represented by the following formula (5), and to a photosensitive dry film and a method for forming a patter by using the photosensitive resin composition.According to the present invention, it is possible to provide a photosensitive resin composition which can form a resist film in which the occurrence of crack is suppressed, the film reduction of the unexposed area is suppressed, and sensitivity and resolution are excellent, and to provide a photosensitive dry film and a method for forming a pattern by using the photosensitive resist composition[In the formula, Y is a straight or branched hydrocarbon group of 1 to 6 carbon atoms; 1 and m are respectively independently an integer of 1 to 3; n is 1 or 2; p and q are respectively independently 0 or 1.]
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.