Process of manufacturing crystalline silicon solar cell
US8647895B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 6, 2012 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | Aug 9, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A process of manufacturing a crystalline silicon solar cell includes forming a rough surface on a surface of the crystalline silicon wafer and an Al2O3 film is coated on a non-rough surface thereof. A single-sided n diffusion layer and phosphosilicate glass film are formed. An anti-reflection layer SiNx film is formed on a top surface of the phosphosilicate glass film. An Al metallic film is formed as a back ohmic electrode on the Al2O3 film. The local area of the anti-reflection layer SiNx film and the phosphosilicate glass film is melted and removed to form a local area of n+-Si layer. Then, an Al—Si back ohmic contact electrode is formed between the Al metallic film and the crystalline silicon wafer. A front ohmic contact electrode is formed on the molten and removed area of the antireflection layer SiNx film and the phosphosilicate film by light-induced plating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.