Use of graphene to limit copper surface oxidation, diffusion and electromigration in interconnect structures
US8647978B1 · kind B1 · utility
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20Claims
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Key dates
| Filing date | Jul 18, 2012 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | Jul 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contiguous layer of graphene is formed on exposed sidewall surfaces and a topmost surface of a copper-containing structure that is present on a surface of a substrate. The presence of the contiguous layer of graphene on the copper-containing structure reduces copper oxidation and surface diffusion of copper ions and thus improves the electromigration resistance of the structure. These benefits can be obtained using graphene without increasing the resistance of copper-containing structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.