Patent · US Active

Method for improving uniformity of chemical-mechanical planarization process

US8647987B2 · kind B2 · utility

198Cited by

2References

17Claims

0Family size

Assignee

INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

Tao Yang · Zhejiang, CN
Chao Zhao · Thuwal, SA
Junfeng Li · Nanhu, CN

Key dates

Filing date	Jun 12, 2012
Grant date	Feb 11, 2014
Priority date	—
Expiry date	Jun 12, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention provides a method for improving uniformity of chemical-mechanical planarization process, comprising the steps of: forming features on a substrate; forming a first dielectric isolation layer between the features; planarizing the first dielectric isolation layer until the features are exposed, causing the first dielectric isolation layer between the features to have a recess depth; forming a second dielectric isolation layer on the features and the first dielectric isolation layer, whereby reducing the difference in height between the second dielectric isolation layer between the features and the second dielectric isolation layer on the top of the features; planarizing the second dielectric isolation layer until the features are exposed. According to the method for improving uniformity of chemical-mechanical planarization process of the invention, a dielectric isolation layer is formed again after grinding the dielectric isolation layer on the top of the features, such that the difference in height between the dielectric layer between the features and the dielectric layer on the top of the features is effectively reduced, and the recess of the features is compensated, t…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.