Patent · US Active

Semiconductor integrated circuit

US8648392B2 · kind B2 · utility

5Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 16, 2010
Grant dateFeb 11, 2014
Priority date
Expiry dateDec 26, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/907

Abstract

A plurality of PMOS transistors are provided on a substrate along an X-axis direction such that a gate length direction of each of the PMOS transistors is parallel to the X-axis direction. A plurality of NMOS transistors are provided on the substrate along the X-axis direction such that a gate length direction of each of the NMOS transistors is parallel to the X-axis direction, and each of the plurality of NMOS transistors is opposed to a corresponding one of the PMOS transistors in the Y-axis direction. Gate lines respectively correspond to the PMOS transistors and the NMOS transistors, and are arranged parallel to each other and extend linearly along the Y-axis direction such that each of the gate lines passes through gate areas of the PMOS transistors and NMOS transistors which correspond to each of the gate lines.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.