Patent · US Active

Semiconductor power modules and devices

US8648643B2 · kind B2 · utility

33Cited by
37References
34Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 24, 2012
Grant dateFeb 11, 2014
Priority date
Expiry dateJun 21, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K2201/10545
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a second transistor encased in a second package, the second transistor being mounted over a second conductive portion of the second package. The component further includes a substrate comprising an insulating layer between a first metal layer and a second metal layer. The first package is on one side of the substrate with the first conductive portion being electrically connected to the first metal layer, and the second package is on another side of the substrate with the second conductive portion being electrically connected to the second metal layer. The first package is opposite the second package, with at least 50% of a first area of the first conductive portion being opposite a second area of the second conductive portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.