Bulk acoustic wave resonator structure, a manufacturing method thereof, and a duplexer using the same
US8648671B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2011 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | May 4, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A Bulk Acoustic Wave Resonator (BAWR), a method of manufacturing of the BAWR, and duplexer including the BAWR are provided. The BAWR may include a first substrate including a via hole formed in a predetermined area of a bottom surface of the first substrate. A first air cavity may be formed above the first substrate, and a first lamination resonating portion may be laminated above the first air cavity in sequence of a lower electrode, a piezoelectric layer, and an upper electrode. A second air cavity may be formed above the first substrate, and a second lamination resonating portion may be laminated above the second air cavity in sequence of the lower electrode, the piezoelectric layer, and the upper electrode. The first lamination resonating portion and the second lamination resonating portion may be connected via either the lower electrode or the upper electrode. A first electrode portion may include a third air cavity formed on a bottom surface of either the lower electrode or the upper electrode connecting between the first lamination resonating portion and the second lamination resonating portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.