Method for producing a metal-insulator-metal capacitor for use in semiconductor devices
US8649154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2011 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | May 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of manufacturing metal-insulator-metal capacitor structures, and the metal-insulator-metal capacitor structures obtained, are disclosed. In one embodiment, a method includes providing a substrate, forming on the substrate a first metal layer comprising a first metal, and using atomic layer deposition with an H2O oxidant to deposit on the first metal layer a protective layer comprising TiO2. The method further includes using atomic layer deposition with an O3 oxidant to deposit on the protective layer a dielectric layer of a dielectric material, and forming on the dielectric layer a second metal layer comprising a second metal. In another embodiment, a metal-insulator-metal capacitor includes a bottom electrode comprising a first metal, a protective layer deposited on the bottom electrode and comprising TiO2, a dielectric layer deposited on the protective layer and comprising a dielectric material, and a top electrode formed on the dielectric layer and comprising a second metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.