Patent · US Active

Multiple bit phase change memory cell

US8649213B2 · kind B2 · utility

1Cited by

2References

13Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Ludovic Goux · Hannut, BE
Thomas Gille · Heverlee, BE
Judit Lisoni · Oud-Heverlee, BE
Dirk Wouters · Heverlee, BE

Key dates

Filing date	Mar 30, 2009
Grant date	Feb 11, 2014
Priority date	—
Expiry date	Nov 13, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/8828

Abstract

A phase change memory cell has more than one memory region each being a narrowed region of phase change memory material extending between first and second electrodes. Each of the plurality of memory regions can be programmed to be in a low resistance state or a high resistance state by applying suitable programming conditions of current and/or voltage. The resistances of the high resistance states and the programming conditions to convert the high resistance states to the low resistance state are different in each of the plurality of memory regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.