Semiconductor laser and method for manufacturing the same
US8649410B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2010 |
| Grant date | Feb 11, 2014 |
| Priority date | — |
| Expiry date | May 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser according to the present invention includes a first reflective region and a second reflective region disposed opposite to the first reflective region in a predetermined direction of an optical axis. The first reflective region has a plurality of gain waveguides each including an active layer and a plurality of refractive-index controlling waveguides each having a first diffraction grating formed therein. The gain waveguides and the refractive-index controlling waveguides are alternately arranged at a predetermined pitch in the direction of the optical axis. The second reflective region has a second diffraction grating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.