Method for selectively removing material from the surface of a substrate, masking material for a wafer, and wafer with masking material
US8652343B2 · kind B2 · utility
0Cited by
13References
31Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 14, 2003 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Aug 18, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the selective removal of material from a substrate surface for forming a deepening includes the steps of applying a mask onto the substrate surface in accordance with the desired selective removal and dry-etching the substrate, a metal, preferably aluminum, being used as the masking material. Power may be coupled inductively to a plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.