Patent · US Active

C-plane sapphire method and apparatus

US8652658B2 · kind B2 · utility

13Cited by

20References

9Claims

0Family size

Assignee

SAINT-GOBAIN CERAMICS & PLASTICS, INC. · US

Inventors

Vitali Tatartchenko · Nashua, US
Christopher D. Jones · Amherst, US
Steven Anthony Zanella · Dublin, US
John Walter Locher · Amherst, US
Fery Pranadi · Nashua, US

Key dates

Filing date	Sep 21, 2007
Grant date	Feb 18, 2014
Priority date	—
Expiry date	Jul 21, 2029

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/23986
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.