Photoresist composition and method of forming pattern by using the same
US8652749B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 28, 2011 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Aug 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6729
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent.andR1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.