Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance
US8652871B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Aug 26, 2009 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Feb 17, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.