Method for making side growth semiconductor nanowires and transistors obtained by said method
US8652944B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 9, 2009 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Feb 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fabricating semiconductor nanowires (5) on a substrate (1) having a metallic oxide layer (2), includes: a) exposing the metallic oxide layer to a hydrogen plasma (11) of power P for a duration t suitable for reducing the layer and for forming metallic nanodrops (3) of radius (Rm) on the surface of the metallic oxide layer; b) low temperature plasma-assisted deposition of a thin layer (4) of a semiconductor material on the metallic oxide layer including the metallic nanodrops, the thin layer having a thickness (Ha) suitable for covering the metallic nanodrops; and c) thermal annealing at a temperature T sufficient to activate lateral growth of nanowires by catalysis of the material deposited as a thin layer from the metallic nanodrops. Nanowires are obtained by this method and nanometric transistors including a semiconductor nanowire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.