Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element
US8652948B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2008 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Dec 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
During the growth of a nitride semiconductor crystal on a nonpolar face nitride substrate, such as an m-face, the gas that constitutes the main flow in the process of heating up to a relatively high temperature range, before growth of the nitride semiconductor layer, (the atmosphere to which the main nitride face of the substrate is exposed) and the gas that constitutes the main flow until growth of first and second nitride semiconductor layers is completed (the atmosphere to which the main nitride face of the substrate is exposed) are primarily those that will not have an etching effect on the nitride, while no Si source is supplied at the beginning of growth of the nitride semiconductor layer. Therefore, nitrogen atoms are not desorbed from near the nitride surface of the epitaxial substrate, thus suppressing the introduction of defects into the epitaxial film. This also makes epitaxial growth possible with a surface morphology of excellent flatness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.