Semiconductor structure made using improved multiple ion implantation process
US8652952B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | May 15, 2012 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | May 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.