Patent · US Active

Stabilized etching solutions for CU and CU/NI layers

US8652972B2 · kind B2 · utility

3Cited by

1References

5Claims

0Family size

Assignee

BASF SE

Inventors

Martin Fluegge · Wiesbaden, DE
Raimund Mellies · Dieburg, DE
Thomas Goelzenleuchter · Büttelborn, DE
Marianne Schwager · Weiterstadt, DE
Ruediger Oesten · Bischofswerda, DE

Key dates

Filing date	Aug 7, 2006
Grant date	Feb 18, 2014
Priority date	—
Expiry date	Apr 17, 2031

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23F1/18
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The present invention relates to new storage-stable solutions which can be used in semiconductor technology to effect specific etching of copper metallization layers and also Cu/Ni layers. With the new etch solutions it is possible to carry out etching and patterning of all-copper metallizations, layers of copper/nickel alloys, and also successive copper and nickel layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.