Method and system for pre-heating of semiconductor material for laser annealing and gas immersion laser doping
US8652974B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 22, 2011 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | May 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fiber laser system enables a method for treating a semiconductor material by preheating a wafer for laser annealing and gas immersion laser doping by a laser source. A long wave length fiber laser having a Gaussian or similar profile is applied in a full-width ribbon beam across an incident wafer. Preferably the wavelength is greater than 1 μm (micron) and preferably a Yb doped fiber laser is used. The process is performed in a suitable environment which may include doping species. The process ensures the temperature gradient arising during processing does not exceed a value that results in fracture of the wafer while also reducing the amount of laser radiation required to achieve controlled surface melting, recrystallization and cooling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.