Semiconductor light emitting device
US8653498B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2011 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Jan 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.