Thin-film transistor and method for manufacturing the same
US8653517B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2011 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Apr 1, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a TFT that adopts an oxide semiconductor as an active layer and has a resistance layer interposed between the active layer and one of a source and drain electrode, while Vth close to 0 V and a small off current are sustained, an on-current is increased. In a thin-film transistor including a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, and a drain electrode, the semiconductor layer that links the source electrode and drain electrode is made of a metal oxide. The semiconductor layer includes three regions of first, second, and third regions. The first region is connected with the source electrode, the third region is connected with the drain electrode, and the second region is connected between the first region and third region. The resistivities of the three regions have the relationship of the first region>the second region>the third region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.