Semiconductor device and method of manufacturing the same
US8653533B2 · kind B2 · utility
11Cited by
1References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 2, 2010 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Sep 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.