Patent · US Active

Optoelectronic semiconductor body and method for producing the same

US8653540B2 · kind B2 · utility

15Cited by
24References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 12, 2013
Grant dateFeb 18, 2014
Priority date
Expiry dateApr 12, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/84

Abstract

An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.