Micro-interconnects for light-emitting diodes
US8653542B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2011 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Jun 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of fabricating a light emitting diode (LED) package. The method includes bonding a plurality of separated light emitting diode (LED) dies to a substrate, wherein each of the plurality of separated LED dies includes an n-doped layer, a quantum well active layer, and a p-doped layer; depositing an isolation layer over the plurality of separated LED dies and the substrate; etching the isolation layer to form a plurality of via openings to expose portions of each LED die and portions of the substrate; forming electrical interconnects over the isolation layer and inside the plurality of via openings to electrically connect between one of the doped layers of each LED die and the substrate; and dicing the plurality of separated LED dies and the substrate into a plurality of LED packages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.