Semiconductor device and electric power conversion system using the same
US8653588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2012 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Jul 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; trenches in the first semiconductor layer; a semiconductor protruding part on the first semiconductor layer; a third semiconductor layer on the semiconductor protruding part; a fourth semiconductor layer on the third semiconductor layer; a gate insulating layer disposed along the trench; a first interlayer insulating layer disposed along the trench; a first conductive layer facing to the fourth semiconductor layer; a second conductive layer on the first interlayer insulating layer; a second interlayer insulating layer covering the second conductive layer; a third conductive layer on the third semiconductor layer and fourth semiconductor layer; a contacting part connecting the third conductive layer and third semiconductor layer; and a fourth conductive layer formed on the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.