Semiconductor device and manufacturing method thereof
US8654231B2 · kind B2 · utility
29Cited by
28References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2011 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Dec 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/026
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.