Static random-access cell, active matrix device and array element circuit
US8654571B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2012 |
| Grant date | Feb 18, 2014 |
| Priority date | — |
| Expiry date | Jan 11, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2356/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A static random-access memory (SRAM) cell which includes: a sampling switch and a feedback switch; and a first inverter and a second inverter connected in series whereby an output of the first inverter is connected to an input of the second inverter. An input of the first inverter is connected to a data input of the SRAM cell via the sampling switch, and to a data output of the SRAM cell independent of the feedback switch, an output of the second inverter is connected to the input of the first inverter via the feedback switch, and first and second clock inputs of the SRAM cell are configured to control the sampling switch and the feedback switch, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.