Manufacturing method of group of whiskers
US8658246B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2011 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Jan 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02645
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A seed substrate is placed to face a formation substrate, and then a gas containing silicon is introduced and chemical vapor deposition is performed. There is no particular limitation on a kind of a material used for the formation substrate as long as the material can withstand the temperature at which the reduced pressure chemical vapor deposition is performed. A group of silicon whiskers which does not include a seed atom can be grown directly on and in contact with the formation substrate. Further, the substrate provided with the group of whiskers can be applied to a solar cell, a lithium ion secondary battery, and the like, by utilizing surface characteristics of the group of whiskers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.