Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same
US8658449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2010 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Aug 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor layer with which inactivation of impurity is able to be inhibited by a simple method, a semiconductor layer in which inactivation of impurity is inhibited, a method of manufacturing a laser diode with which inactivation of impurity is able to be inhibited by a simple method, and a laser diode including a semiconductor layer in which inactivation of impurity is inhibited are provided. In the method of manufacturing a semiconductor layer, after a semiconductor layer is formed by epitaxial growth with the use of AsH3, supply of AsH3 is stopped without separately supplying new gas when process temperature is 500 deg C. or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.