Low temperature ceramic microelectromechanical structures
US8658452B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2009 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Jul 8, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.