Patterned doping for polysilicon emitter solar cells
US8658458B2 · kind B2 · utility
3Cited by
3References
14Claims
0Family size
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Inventor
Key dates
| Filing date | Jun 15, 2011 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Dec 16, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
An improved method of manufacturing a polysilicon solar cell is disclosed. To create the polysilicon layer, which has p-type and n-type regions, the layer is grown in the presence of one type of dopant. After the doped polysilicon layer has been created, ions of the opposite dopant conductivity are selectively implanted into portions of the polysilicon layer. This selective implant may be performed using a shadow mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.