Stacked body-contacted field effect transistor
US8658475B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 10, 2013 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Apr 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
The present disclosure relates to a stacked body-contacted field effect transistor (FET) that includes multiple body-contacted FETs coupled in series and a lateral isolation band encircling a periphery of the multiple FETs. The multiple FETs include a first end FET having a first body, which is not directly connected to any body of any other of the multiple FETs, and a second end FET having a second body, which is not directly connected to any body of any other of the multiple FETs. The multiple FETs may include inner FETs that incorporate merged source-drains to save space. By keeping the bodies electrically separated from one another, the full benefits of body-contacting may be realized. However, by incorporating multiple FETs within a single lateral isolation band further saves space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.