Semiconductor light source and method of fabrication thereof

US8659038B2 · kind B2 · utility

Assignee

• The University of Sheffield · GB

Inventors

• Kristian Michael Groom · Sheffield, GB
• Richard Hogg · Sheffield, GB

Key dates

• Filing date: Jun 9, 2010
• Grant date: Feb 25, 2014
• Expiry date: Jun 9, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/2209
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Embodiments of the present invention provided a method of fabricating a semiconductor light source structure. The method comprises providing a GaAs substrate; forming a lower cladding layer above the substrate, the lower cladding layer comprising an AIxGa1-xAs alloy; forming an active region above the lower cladding layer, the active region comprising a GaAs separate confinement heterostructure; and forming an upper cladding layer comprising an AIxGa1-xAs alloy above the active region in the form of an elongate stripe bounded on either side by an InGaP current-blocking layer, the elongate stripe defining an index-guided optical waveguide. The stripe is formed such that at least one free end of the stripe is spaced apart from an edge of the substrate in a direction parallel to a longitudinal axis of the stripe such that a portion of the lower cladding layer, active region, current blocking layer and upper cladding layer extend beyond the at least one free end of the stripe thereby to provide an unpumped and laterally unguided window region.